(Ge,Si) Nx anti-reflective compositions and integrated circuit devices comprising the same
US5986318A · kind A · utility
25Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1997 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Oct 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-reflective composition used in manufacturing integrated circuit devices comprises a silicon-added germanium nitride material. The composition is present in a solid solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.