Patent · US Expired

Semiconductor physical quantity sensor

US5987989A · kind A · utility

85Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 5, 1997
Grant dateNov 23, 1999
Priority date
Expiry dateFeb 5, 2017

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P2015/0814
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is ele…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.