Process and device for sublimation growing of silicon carbide monocrystals

US5989340A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Dietrich Stephani · Bubenreuth, DE
• Johannes Volkl · Erlangen, DE

Key dates

• Filing date: Aug 27, 1997
• Grant date: Nov 23, 1999
• Expiry date: Aug 27, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1016
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21) facing the reaction chamber (2). At least part of the silicon carbide of the wall (20) is sublimated and grown on a seed crystal (3) as a silicon carbide monocrystal (4).