Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
US5989690A · kind A · utility
11Cited by
1References
57Claims
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Key dates
| Filing date | Mar 20, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Mar 20, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc.sub.2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.