Process for treating a semiconductor substrate comprising a surface-treatment step
US5990013A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Dec 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for treating a semiconductor substrate, comprising a prior surface-treatment step using a plasma at medium or low pressure, preferably having an electron concentration N.sub.e .gtoreq.10.sup.11 cm.sup.-3 and preferably producing a small potential difference V.sub.p -V.sub.f <20 V, wherein the surface energy of the treated surface is determined so as optionally to have fast feedback on the control of the process in order to optimize the plasma treatment, and the prior surface treatment step may be followed by a deposition step with a view to filling or planarizing the treated surface or to improving morphological, physical, or electrical characteristics of materials deposited on the treated surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.