Electron emission device and display device using the same
US5990605A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Mar 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.