Intracavity frequency-converted optically-pumped semiconductor laser
US5991318A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18383
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg-mirror portion define a laser resonant-cavity including the gain-portion of the semiconductor layer structure. A birefringent filter is located in the resonant-cavity for selecting a frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the resonant-cavity between the birefringent filter and the external mirror and arranged to double the selected frequency of laser-radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.