Laser plasma x-ray source, semiconductor lithography apparatus using the same and a method thereof
US5991360A · kind A · utility
54Cited by
6References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 3, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Feb 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser plasma X-ray source has an improved X-ray conversion efficiency and a minimized occurrence of debris, and a semiconductor lithography apparatus using the same and a method therefor are provided. An X-ray generation unit has a vacuum chamber 5 which encases the target; target supply unit 110 which supplies a fine particle mixture gas target into the vacuum chamber 5; a laser irradiation unit 120 which irradiates a laser beam 2 on the particle mixture gas target 10; and a target recovery unit 130 which recovers unused particle mixture gas target from the vacuum chamber 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.