Process for transferring a thin film from an initial substrate onto a final substrate

US5993677A · kind A · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Beatrice Biasse · Saint-Martin-d'Hères, FR
• Michel Bruel · Saint-Égrève, FR
• Marc Zussy · Grenoble, FR

Key dates

• Filing date: Jan 10, 1997
• Grant date: Nov 30, 1999
• Expiry date: Jan 10, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A thin film is transferred from an initial substrate onto a final substrate. The process includes the following successive stages: joining of the thin film (112) onto a handle substrate (120) comprising a cleavage zone, elimination of the initial substrate, joining of the thin film (112) with a final substrate (132), and cleavage of the handle substrate (120) following the cleavage zone. The cleavage zone includes a film of micro-bubbles formed by ion implantation. The invention has, in particular, applications in the fabrication of three-dimensional structures of integrated circuits.