Method of producing an aluminum film
US5993908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in an oven in a controlled fashion from a target temperature to a final temperature such that energetically stable Al.sub.2 Cu-.theta.-phases are formed directly among the individual aluminum grains in the aluminum film. The cooling is controlled such that the instantaneous temperature passes through a predetermined temperature profile. Within the range of 320.degree. C. to 200.degree. C., the cooling gradient is less than 6.degree. C. per hour.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.