Method of manufacturing semiconductor device
US5994227A · kind A · utility
13Cited by
3References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 20, 1998 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Jul 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH.sub.2 F.sub.2 and O.sub.2. As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.