Method for cold cleaving of laser wafers into bars
US5994230A · kind A · utility
2Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1997 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Dec 16, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB28D5/0011
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
The cleavage of semiconductor crystalline wafers into laser diodes or laser diode bars is carried out at a low temperature at which both the semiconductor crystal substrate and the laser-forming laminate structure thereon are imbrittled. Cleavage at such low temperatures permits the cleavage planes to be closer together than was hitherto possible. A thickness to cavity length ratio of the resulting laser diodes or laser diode bars is approximately 1 as a result compared to 3/4 by prior art techniques. Also, the energy required for cleaving is reduced thus ensuring mirror surfaces at the cleavage planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.