Field-effect-controllable semiconductor component with a plurality of temperature sensors

US5994752A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Rainald Sander · Oberhaching, DE
• Alfons Graf · Kaufering, DE

Key dates

• Filing date: Sep 18, 1996
• Grant date: Nov 30, 1999
• Expiry date: Sep 18, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A field-effect-controllable power semiconductor component, such as a power MOSFET or IGBT, includes a semiconductor body, at least one cell field, a multiplicity of mutually parallel-connected transistor cells disposed in the at least one cell field, and at least two temperature sensors integrated in the semiconductor body and disposed at different locations from each other on the semiconductor body. Thus a temperature gradient between a strongly heated local region of the semiconductor body and one of the temperature sensors is reduced and a response time in the event of an overload is shortened.