Device having a low threshold voltage for protection against electrostatic discharges
US5994760A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 21, 1998 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Oct 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The present invention relates to an assembly of two pairs of diodes in a single semiconductor substrate of a first type of conductivity, the first pair including a first diode in series with a second diode, the second pair including a third diode in series with a fourth diode, the two pairs of diodes being arranged in parallel. Each of the first and third diodes includes neighboring regions of distinct types of conductivity formed in a lightly-doped well of the second type of conductivity, these wells being separated; each of the second and fourth diodes includes separated regions of distinct types of conductivity; and metallizations connect the electrodes of the diodes to form the desired series-to-parallel assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.