Silicon carbide high frequency high power amplifier
US5994965A · kind A · utility
37Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1998 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Apr 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/198
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high power amplifier (10) includes intelligent independent fault tolerant amplifying modules (11). Each of the modules (11) includes a power amplifier (17) having a plurality of silicon carbide transistor circuits (27-30) coupled in parallel and driven by a silicon carbide transistor circuit (26). The module (11) also includes a dedicated hybrid controller (18) that monitors the operational conditions of the power amplifier (17) and optimizes these operational conditions in order to provide fault isolation and to avoid unwanted failure of the module (11) as a whole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.