Post-chemical mechanical planarization clean-up process using post-polish scrubbing

US5996594A · kind A · utility

Assignees

• TEXAS INSTRUMENTS INCORPORATED · US
• International Business Machines Corporation · US

Inventors

• Sudipto Ranendra Roy · Singapore, SG
• Iqbal Ali · San Jose, US
• Gregory B. Shinn · Dallas, US
• Rajani C. Shah · Austin, US
• Shelley H. Peterman · Austin, US
• Srini Raghavan · Tucson, US

Key dates

• Filing date: Mar 19, 1996
• Grant date: Dec 7, 1999
• Expiry date: Mar 19, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S134/902
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

A post chemical-mechanical polishing clean-up process. Particles and ionic and metallic contaminants remaining on wafer 32 surface after CMP are removed and scratches are smoothed. The wafer 32 may be subjected to a high pressure/high rotational speed rinse at spindle rinse station 42 followed by buffing of the wafer 32 on a second polishing platen 38. If desired, a second high pressure/high speed rinse at spindle rinse station 42 may be performed after the buffing step. The wafer 32 may then be then transferred to a tank 50 for a megasonic bath and after the megasonic bath, the wafer 32 is transferred to a scrubber 44, which scrubs both surfaces of the wafer 32 with brushes and then spins the wafer 32 dry as spin station 84. All transfers are performed in a solution such as DI water to prevent drying of slurry on the wafer surface.