Silicon etching process for making microchannel plates
US5997713A · kind A · utility
84Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 1998 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.