Spin valve effect magnetoresistive sensor and magnetic head with the sensor
US5998016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1998 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Jan 13, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve effect MR sensor includes a spin valve effect multi-layered structure. This structure has a first thin film layer of ferromagnetic material with one and the other surfaces, a second thin film layer of ferromagnetic material with one and the other surfaces, a thin film spacer layer of nonmagnetic conductive material deposited between the one surfaces of the first and second ferromagnetic material layers, a thin film layer of anti-ferromagnetic material deposited on the other surface of the second ferromagnetic material layer, for pinning the second ferromagnetic material layer, a thin film layer of anti-diffusion material deposited on the other surface of the first ferromagnetic material layer, and a thin film current bypass layer of nonmagnetic conductive material deposited on the thin film anti-diffusion material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.