Method for making liquid crystal display device with reduced mask steps
US5998230A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for making a liquid crystal display device, a first conductive film is formed on a substrate, and patterned to form a gate electrode and a gate line; a gate insulating film for covering the gate electrode and the gate line, a semiconductor film, an impurity-doped semiconductor film, and a second conductive film are continuously formed; the second conductive film and the impurity-doped semiconductor film are patterned using a common mask to form a source electrode, a source line, and a drain electrode from the second conductive film and to form an ohmic contact layer from the impurity-doped semiconductor layer; an insulating film is formed onto at least the source electrode, the source line, the drain electrode, and the semiconductor film; the insulating film, the semiconductor film, and the gate insulating film are patterned using a common mask to form a thin film transistor to be in contact with a pixel electrode; a transparent conductive film is deposited on the non-deposited section of the substrate and patterned to form the pixel electrode; and a liquid crystal is enclosed between the resulting thin film transistor substrate and a counter substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.