Method of producing semiconductor device by dicing
US5998234A · kind A · utility
30Cited by
6References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Mar 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.