Prevention of photoelectric conversion layer contamination in an imaging device
US5998794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Oct 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1843
Abstract
A semiconductor imaging device comprising MOS or CMOS pixel circuits having pixel pads separated by insulating material and having a conductive migration blocking layer applied over the pixel pads. The conductive migration blocking layer comprises an electrically conductive material that is inert with respect to selected photoelectric conversion layer materials, and may be formed as individual contacts, or formed as a deposited layer and etched to form distinct pixels covering the underlying pixel pad material. Thereafter, a photoelectric conversion layer is applied over the migration blocking layer material. The basic device is completed by applying a field electrode layer over the photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.