High performance MOSFET device with raised source and drain
US5998835A · kind A · utility
25Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1998 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Feb 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET device and a method of manufacturing the device. The device has a trench formed in a silicon substrate. The channel of the device is at the bottom of the trench. Diffusion layers are formed adjacent to opposite sides of the trench. Each diffusion layer is connected to the edge of the device channel by extending the diffusion layer along the side wall of the trench and under a portion of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.