Bipolar power transistor with buried base and interdigitated geometry
US5998855A · kind A · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 16, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/125
Abstract
A bipolar power transistor of interdigitated geometry having a buried P type base region, a buried N type emitter region, a P type base-contact region, an N type emitter-contact region, connected to an emitter electrode and an N type connection region disposed around the emitter-contact region. The emitter region is buried within the base region in such a way that the buried emitter region and the connection region delimit a P type screen region. The transistor further includes a biasing P type region in contact with the emitter electrode, which extends up to the screen region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.