Radiation emitter component

US5999552A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Georg Bogner · Lappersdorf, DE
• Herbert Brunner · Sinzing, DE
• Heinz Haas · Regensburg, DE
• Johann Luft · Wolfsegg, DE
• Ernst Nirschl · Wenzenbach, DE
• Werner Spaeth · Holzkirchen, DE
• Norbert Stath · Regensburg, DE
• Wolfgang Teich

Key dates

• Filing date: Jan 20, 1998
• Grant date: Dec 7, 1999
• Expiry date: Jan 20, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.