Patent · US Expired

Process and apparatus for the growth of single crystals

US6001170A · kind A · utility

6Cited by

7References

17Claims

0Family size

Assignee

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

Erich Tomzig · Altötting, DE
Werner Zulehner · Burghausen, DE
Wilfried von Ammon · Burghausen, DE
Yu M Gelfgat · Rīga, LV
Leonid Gorbunov · Rīga, LV

Key dates

Filing date	Aug 9, 1996
Grant date	Dec 14, 1999
Priority date	—
Expiry date	Aug 9, 2016

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1032
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.