Crystal producing method and apparatus therefor
US6001175A · kind A · utility
Inventors
Key dates
| Filing date | Mar 4, 1996 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Mar 4, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1004
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus of producing a crystal by using of vapor growth process, wherein: a high-frequency coil or conductor having a coil or conductor surface to generate a plane-like induction electric field is arranged so that at least one gas blowout port is connected to the coil or conductor surface so as to face a solid substrate; and a component element or a chemical compound is continuously precipitated and grown on a surface of the solid substrate at a temperature of not higher than the melting point of the solid substrate while the solid substrate is inductively heated by the high-frequency coil or conductor and a raw gas is supplied onto the surface of the solid substrate through the gas blowout port, to thereby produce a polycrystal or monocrystal thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.