Plasma enchanced chemical method
US6001267A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Feb 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3322
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.