Chemical vapor infiltration method with variable infiltration parameters
US6001419A · kind A · utility
17Cited by
6References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 6, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Oct 6, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/75
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Between the start and the end of the chemical vapor infiltration process, filtration conditions are modified by causing at least one of the following infiltration parameters to vary: retention time of the gas, pressure, temperature, concentration of precursor in the gas, and concentration of dopant, if any, in the gas; thereby adapting infiltration conditions to changes in the porometry of the substrate in order to control the microstructure of the material deposited within the substrate, in particular in order to conserve a microstructure that is constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.