Patent · US Expired

Method for making closely-spaced VCSEL and photodetector on a substrate

US6001664A · kind A · utility

74Cited by
14References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 21, 1997
Grant dateDec 14, 1999
Priority date
Expiry dateFeb 21, 2017

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/128
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds the layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where the photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons back into the photodetector not initially absorbed. The transmit and receive pairs are packaged in a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.