Method and apparatus for manufacturing polysilicon thin film transistor
US6001714A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Sep 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/673
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention proves a method and apparatus for manufacturing a polysilicon TFT without a defective activated area in a channel region below a gate. According to the instant invention, a dopant is implanted into a polysilicon thin film formed on an substrate with a gate having a tapered edge which is used as a mask to form a source and a drain. An energy beam then slantingly irradiates from the side of the edge of the gate to the surface of the substrate. Thus, the source and drain are activated and, at the same time, the energy beam streams into the polysilicon thin film below the edge of the gate to activate the channel region implanted the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.