Selective metallization/deposition for semiconductor devices
US6001722A · kind A · utility
0Cited by
8References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective metallization/deposition including patterning a mask on the surface of a substrate structure to define contact areas, and utilizing a compound, including a metal, which dissociates under predetermined conditions. The dissociation and application of the predetermined conditions occurring either during deposition or after deposition to selectively form a layer of the metal on the contact areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.