Apparatus for processing silicon devices with improved temperature control
US6002113A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 1998 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | May 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus for processing a silicon workpiece uses reflected UV light to measure and control the workpiece temperature. A linearly polarized beam including UV light is directed onto a silicon surface to produce a reflected beam. The reflected beam is cross-polarized to null out much of the light, and the resulting residual reflectivity spectrum is determined. The temperature is determined from the characteristics of this spectrum. A workpiece heating station uses this measuring technique to accurately control the temperature of a silicon workpiece and temperature-dependent processing over a wide range of processing temperatures, including temperatures below 500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.