Structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same
US6004471A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 5, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Feb 5, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same, in which the silicon wafer is used as a substrate. A silicon substrate is etched to form a desired wiring pattern, then a silicon dioxide layer is grown as a layer of thermal oxide on the silicon substrate by heating the etched substrate in an oxygen-containing atmosphere. After a platinum film is deposited onto the surface of the silicon dioxide layer, the platinum-coated substrate is subject to gentle polishing. The platinum membrane outside the etched groove is easily detached while the platinum layer inside the etched groove remains attached. Thus a platinum circuit with a desired circuit pattern is formed on the substrate. After heat treatment in a temperature range of 750.degree. C..about. 1500.degree. C. and further processing, the sensing element of a platinum resistance thermometer is obtained. The platinum circuit thus formed is submerged in an groove and has a substantially bulk structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.