SOI substrate and a method for fabricating the same
US6004860A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1996 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Aug 30, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate and a method for fabricating the same are provided to sharpen the departing angle at the circumference of the active substrate, and provide the active substrate with a uniform thickness. An attached wafer of the present invention is formed by processing the upper side of the base substrate so that its thickness increases from the center to the circumference, and attaching the active substrate to the processed side of the base substrate. The unattached portion of the attached wafer is removed. Then mirror processing is performed to provide the active substrate with a substantially uniform thickness along the processed side of the base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.