Very low leakage JFET for monolithically integrated arrays
US6005266A · kind A · utility
30Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Mar 13, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Mar 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/83
Abstract
A low leakage current monolithic InGaAs InP discrete device is provided for a focal plane array for near-infrared imaging. The array consists of a plurality of InGaAs p-i-n diodes for photodetectors, with each being integrated on a common substrate with an Inp junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a p-encapsulation of an n-drained of each JFET is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.