Divided photodiode
US6005278A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Jan 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.