High resolution three-dimensional doping profiler
US6005400A · kind A · utility
25Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.