Static memory with low power write port
US6005794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The write port circuits of a static memory cell includes a first conditional conduction path between a first output of the latch and ground active if and only if both a word line input and a write data true bit line input receive active signals. The write port circuit includes a second conditional conduction path between a second output of the latch and ground active if and only if both the word line and a write data complement bit line receive active signals. The first and second conditional conduction paths may be formed by a series connection of the source-drain paths of two transistors. In each conditional conduction path the gate of a first transistor receives a corresponding column signal and the gate of a second transistor is connected to the word line. The first and second transistors for each conduction path may be N-channel MOS transistors formed in a single N-type region. The first and second transistors forming the conditional conduction paths may be in either order. The word line transistors may bee shared between bit line transistors of a single memory cell or of memory cells in plural contiguous adjacent columns. The memory cells may include a plurality of write port…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.