Method of stripping photoresist from Al bonding pads that prevents corrosion
US6006764A · kind A · utility
42Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1997 |
| Grant date | Dec 28, 1999 |
| Priority date | — |
| Expiry date | Jan 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of removing photoresist from a wafer surface having a bonding pad using a three step clean composed of (1) a wet cleaning the substrate, (2) a F-containing gas high temperature plasma treatment which prevents the corrosion of aluminum contact pad, and (3) completely striping the photoresist strip using an O.sub.2 dry ash. The invention eliminates metal bonding pad corrosion and the completely removes residual photoresist from keyholes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.