Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same
US6008675A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1997 |
| Grant date | Dec 28, 1999 |
| Priority date | — |
| Expiry date | Jul 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polarization-mode selective semiconductor laser includes a semiconductor laser structure including an active layer for generating gain spectra for the first and second different polarization modes and a diffraction grating formed with a uniform pitch over the laser structure. The laser structure includes a first DFB reflector portion with a first channel stripe and a second DFB reflector portion with a second channel stripe connected to the first stripe channel. The first DFB reflector portion and the second DFB reflector portion is serially arranged in a cavity direction of the laser. The first and second stripe channels are bent relative to each other such that a Bragg wavelength for the first polarization mode is coincident with a gain peak wavelength for the first polarization mode in the first DFB reflector portion, to make the first polarization mode dominant in the first DFB reflector portion, and that a Bragg wavelength for the second polarization mode is coincident with a gain peak wavelength for the second polarization mode in the second DFB reflector portion, to make the second polarization mode dominant in the second DFB reflector portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.