Semiconductor laser and manufacturing method therefor
US6009112A · kind A · utility
13Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 1995 |
| Grant date | Dec 28, 1999 |
| Priority date | — |
| Expiry date | Sep 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a double hetero junction structure including: an active layer; cladding layers including an upper layer and a lower layer, the cladding layers sandwiching the active layer; and a current blocking layer including a stripe recess for acting as a current passage. The current blocking layer is provided within at least one of the cladding layers. The current blocking layer comprises a plurality of layers, at least one layer of the layers having a slit therein extending transversely to the stripe recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.