Magnetoresistance effect element, magnetoresistance effect type head and magnetic recording/reproducing apparatus
US6010781A · kind A · utility
4Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1998 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Jan 15, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element exhibiting superb magnetic characteristics and anticorrosion characteristic is disclosed. The magnetoresistance effect element includes an antiferromagnetic layer composed of a material made of Ir, Rh and Mn in which an Ir content percentage is 2-6% by atom and a Mn content percentage is 71-78% by atom, or a material in which the Ir content percentage is 2-12% by atom and the Mn content percentage is 78-84% by atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.