Method for manufacturing semiconductor devices by use of dry etching
US6010919A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 3, 1997 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Apr 3, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.