IGBT power device with improved resistance to reverse power pulses
US6011280A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
Abstract
A semiconductor power device (100) that includes active cells in an interior region of an epitaxial layer (16) on a semiconductor substrate (12), and an edge termination structure that surrounds the cells and separates the cells from the die edge (48). A polysilicon layer (26) overlies and is electrically insulated from the epitaxial layer (16), a gate metal field plate (36) contacts the polysilicon layer (26), and a portion of the polysilicon layer (26) forms a gate for each cell. Each of the active cells also has a collector/anode terminal formed by the substrate (12), an emitter/cathode terminal formed by a well (18), emitter diffusion (20) and emitter metal (22), and a base formed by the epitaxial layer (16). The edge termination structure includes a first well (34) of a first conductivity type underlying the polysilicon layer (26) and completely surrounding the active cells, a second well (30) of an opposite conductivity completely surrounding the first well (34), and metallization (42) contacting the second well (30). The first well (34) is part of a low-voltage ring (28) while the second well (30) is part of a high-voltage ring. The wells (30, 34) are preferably spaced relat…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.