Process and device for the production of epitaxial layers

US6013130A · kind A · utility

Assignee

• Deutsche Forschungsanstalt Fur Luft-Und Raumfahrt E.V. · DE

Inventors

• Ralph Dieter · Schwaikheim, DE
• Hans Opower · Krailling, DE
• Heinrich Weyer · Neunkirchen, DE

Key dates

• Filing date: Mar 22, 1996
• Grant date: Jan 11, 2000
• Expiry date: Mar 22, 2016

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/403
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Layers of compound semiconductor 60 are grown epitaxially on a substrate 40. One or more components 24 are removed from a target 14 by a supply of energy 18, and reacted with gas surrounding the target. The gas stream conveys the components through a nozzle 34 to achieve a uniform layer on the substrate.