Boron doping by decaborane
US6013332A · kind A · utility
44Cited by
7References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 6, 1996 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Dec 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.