Laser diode with substrate-side protection
US6013540A · kind A · utility
1Cited by
12References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 1998 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | May 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device is formed to include a substrate-side dielectric barrier layer in the area where the substrate and facet meet. The dielectric is deposited on the substrate surface prior to cleaving of the facet and results in reducing the defects along the facet. The dielectric material also serves as a substrate-side "anchor" for the dielectric deposited on the facet, reducing the incidence of delamination of the dielectric coating from the facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.