Semiconductor device having an improved lead connection structure and manufacturing method thereof
US6013951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1998 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Jul 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.