Patent · US Expired

Piezoelectric thin-film device process for manufacturing the same, and ink-jet recording head using the same

US6013970A · kind A · utility

33Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 6, 1997
Grant dateJan 11, 2000
Priority date
Expiry dateMar 6, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/8554
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

A piezoelectric thin-film device includes: a substrate and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.