Flared semiconductor optoelectronic device
US6014396A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1997 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Sep 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
As to a first feature, a semiconductor optoelectronic device includes a resonator having an optical cavity between opposite end facets, a larger portion of a length of the resonator cavity comprising a single mode confining region for propagation of light and a smaller portion of a length of the resonator cavity comprising a tapered region for permitting propagation of light with a diverging phase front to a first of the end facets, which first facet is the light beam output. The tapered region provides a sufficiently large aperture to prevent catastrophic optical mirror damage (COD) at the first end facet while reducing the amount of required astigmatism correction while the single mode confining region provides spatial filtering to maintain diffraction-limited beam at the output. This structure therefore, more readily lends itself for incorporation into existing device packages designed for linear stripe laser diodes devices. As to a second feature, a semiconductor optoelectronic device includes a gain region having a region permitting propagation of light with a diverging phase front to a first end facet of the device, which is its output, and a single mode region is coupled to …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.